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| BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES Excellent HFE Linearity. Complementary to KTA2015 Power dissipation.(PC=100mW) Production specification KTC4076W Pb Lead-free APPLICATIONS General purpose and switching application. ORDERING INFORMATION Type No. KTC4076W Marking WO/WY SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 35 30 5 500 100 -55~150 Units V V V mA mW Document number: BL/SSSTF049 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Production specification KTC4076W ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions IC=100A,IE=0 IC=1mA,IB=0 IE=100A,IC=0 VCB=35V,IE=0 VEB=5V,IC=0 VCE=1V,IC=100mA DC current gain hFE VCE=6V,IC=400mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob IC=100mA, IB= 10mA VCE=6V, IC= 20mA VCB=6V, IE=0mA f=1MHz 7.0 25 0.1 0.25 V MHz pF 70 MIN 35 30 5 0.1 0.1 240 TYP MAX UNIT V V V A A CLASSIFICATION Range Marking OF O hFE(1) Y 120-240 70-140 Document number: BL/SSSTF049 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification KTC4076W SOT-323 SOT-323 Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 1.0Typical 0.1Typical All Dimensions in mm PACKAGE INFORMATION Device KTC4076W Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTF049 Rev.A www.galaxycn.com 3 |
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